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SIGC42T120CL - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All R

Features

  • 1200V NPT technology 180µm chip.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power module BSM25GD120DLC E3224.

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Full PDF Text Transcription

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www.DataSheet4U.com Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power module BSM25GD120DLC E3224 Applications: • drives G C E Chip Type SIGC42T120CL SIGC42T120CL VCE 1200V 1200V ICn 25A 25A Die Size 6.59 x 6.49 mm2 6.59 x 6.49 mm2 Package Ordering Code C67078-A4675sawn on foil A001 C67078-A4675unsawn A002 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.59 x 6.
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