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SIGC42T170R3GE - IGBT

Description

Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.

Features

  • 1700V Trench + Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power module.

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Full PDF Text Transcription

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SIGC42T170R3GE IGBT3 Power Chip Features:  1700V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power module Applications:  drives C G E Chip Type VCE ICn SIGC42T170R3GE 1700V 29A Die Size 6.5 x 6.46 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 6.5 x 6.46 4.27 x 4.27 1.18 x 1.09 mm2 42 / 28.
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