BFG235 Datasheet - Infineon Technologies AG

BFG235 NPN Silicon RF Transistor

BFG 235 NPN Silicon RF Transistor For low-distortion broadband output amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 235 Maximum Ratings Parameter Marking BFG235 1=E Pin Configuration 2=B 3=E 4=C Package SOT-223 Symbol VCEO.

BFG235 Datasheet (99.66 KB)