BFG196 Datasheet (Infineon Technologies AG)

BFG196, NPN Silicon RF Transistor

BFG196 NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN Systems fT = 7.5 GHz 3 2 1 VPS05163 F = 1.5 dB at 900 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG196 Maximum Ratings Parameter Marking BFG196 1=E Pin Configuration 2=B 3=E 4=C Package SOT223 Symbol VCEO VCES VCBO VEBO IC IB