BFG135A Datasheet - Infineon Technologies AG

BFG135A NPN Silicon RF Transistor

BFG 135A NPN Silicon RF Transistor For low-distortion broadband amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 135A Maximum Ratings Parameter Marking BFG135A 1=E Pin Configuration 2=B 3=E 4=C Package SOT-223 Symbol VCEO VCES V.

BFG135A Datasheet (100.64 KB)