BFG193 Datasheet (Infineon Technologies AG)

BFG193, NPN Silicon RF Transistor

BFG193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz 4 F = 1.3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG193 Maximum Ratings Parameter Marking BFG193 1=E Pin Configuration 2=B 3=E 4=C Package SOT223 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 80 10 600 150 -65 150 -65 150 Unit V Collector-emitter voltage Collector-