BAR81W Datasheet - Infineon Technologies AG

BAR81W Silicon RF Switching Diode

BAR81 Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines BAR81W 4 3 1 2 Type BAR81W Package SOT343 Configuration single shunt-diode LS(nH) Marking 0.15 BBs series inductance chip to ground Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissip.

BAR81W Datasheet (407.48 KB)

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Datasheet Details

Part number:

BAR81W

Manufacturer:

Infineon ↗ Technologies AG

File Size:

407.48 KB

Description:

Silicon rf switching diode.

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BAR81W Silicon Switching Diode Infineon Technologies AG

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