BAR80 Datasheet - Siemens Semiconductor Group

BAR80 Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)

BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code (tape and reel) Q62702-A1084 Pin configuration 1 2 3 C A C Package 4 A MW-4 1) Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55+125 -55+150 Unit V mA °C °C VR IF Top Tstg 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semicon.

BAR80 Datasheet (68.05 KB)

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Datasheet Details

Part number:

BAR80

Manufacturer:

Siemens Semiconductor Group

File Size:

68.05 KB

Description:

Silicon rf switching diode (design for use in shunt configuration hight shunt signal isolation low shunt insertion loss).

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BAR80 Silicon Switching Diode Design for use shunt configuration Hight shunt signal isolation Low shunt insertion loss Siemens Semiconductor Group

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