IRF620A - N-Channel Mosfet Transistor

Inchange Semiconductor

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Datasheet Details

Part number	IRF620A
Manufacturer	Inchange Semiconductor
File Size	64.30 KB
Description	N-Channel Mosfet Transistor
Datasheet	IRF620A-InchangeSemiconductor.pdf

IRF620A Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 5A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 47 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pd

Features

Low RDS(on) = 0.626Ω(TYP).
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Rugged Gate Oxide Technology.

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Published: Aug 6, 2016 |