IRF620 Datasheet | STMicroelectronics

IRF620 IRF620FI - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI s s s s V DSS 200 V 200 V R DS( on) < 0.8 Ω < 0.8 Ω ID 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C 3 1 2 1 3 2 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s MOTOR CONTROL, AUDIO AMPLIFIERS s INDUSTRIAL ACTUATORS s DC-DC & DC-AC CONVERTERS FOR TELE, INDUSTRIAL AND CONSUMER ENVIRONMENT TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M( - ) P tot V ISO T stg Tj Parameter IRF620 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (cont.) at Tc = 25 o C Drain Current (cont.) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value IRF620FI 200 200 ± 20 6...