IRF620
..
Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A
N Channel
Symbol
ELECTRICAL CHARACTERISICS at
Tj = 25 C Maximum. Unless stated Otherwise Symbol
Parameter
Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage
Test Conditions
VDS = 200VDC, VGS = 0VDC VDS = 160VDC, VGS = 0VDC Tj=125 C VGS = +20VDC VGS = -20VDC VDS = VGS, ID = 250µA
Value Min 200 Typ Max Unit Volt µA n A n A Volt
V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS IGSS VGS(th)
260 100 30 7.2 19 22 13
25 250 100 -100 4.0 0.80 14 3.0 7.9
Static Drain to Source On
- Resistance RDS(on) VGS= 10VDC, ID = 3.1A Gate Charge Gate to Source Charge Gate to Drain Charge Input Capacitance Output Capacitance Transfer Capacitance Turn On Delay Time Turn Off Delay Time Rise Time Fall Time Continuous Source Current Pulsed Source Current Forward Voltage (Diode) QG QGS QGD CISS COSS CRSS td(on) td(off) tr tf IS ISM VSD VGS = 0VDC, IS =5.2A, Tp =...
