IRF620A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω(Typ.)
Absolute Maximum Ratings
Symbol VDSS
IDM VGS EAS IAR EAR dv/dt
TJ , TSTG
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 o C)
Continuous Drain Current (TC=100 o C)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 o C) Linear Derating Factor
O2 O1 O1 O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = 200 V RDS(on) = 0.8 Ω ID = 5 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Value 200 5 3.2 18 +_ 30 67 5 4.7 5.0 47 0.38
- 55 to +150
Units V
A V m J A m J V/ns W W/o C o C
Thermal Resistance
Symbol
RθJC RθCS...
