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BD736 - Silicon PNP Power Transistor

BD736 Description

isc Silicon PNP Power Transistor BD736 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min. Complement to Type BD735.

BD736 Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current

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Datasheet Details

Part number
BD736
Manufacturer
Inchange Semiconductor
File Size
210.54 KB
Datasheet
BD736_InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor BD736-like datasheet