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BD735 - Silicon NPN Power Transistor

Description

DC Current Gain - : hFE = 40(Min.)@ IC= 20mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min.) Complement to Type BD736 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for amplifier and switching applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min.) ·Complement to Type BD736 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.
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