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BD737 - Silicon NPN Power Transistor

BD737 Description

isc Silicon NPN Power Transistor BD737 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min. Complement to Type BD738. M.

BD737 Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Pea

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Datasheet Details

Part number
BD737
Manufacturer
Inchange Semiconductor
File Size
208.09 KB
Datasheet
BD737_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BD737-like datasheet