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2N3055H - Silicon NPN Power Transistor

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Datasheet Details

Part number 2N3055H
Manufacturer Inchange Semiconductor
File Size 31.70 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2N3055H-InchangeSemiconductor.pdf

2N3055H Product details

Description

Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS Designed for general-purpose switching and amplifier Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 15 A IB Base Curr

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