Datasheet4U Logo Datasheet4U.com

2N3019 Datasheet - Inchange Semiconductor

2N3019 Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3019 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 1A PC Collector Power Dissipation@TC=25℃ 5 W Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Rth j-c Thermal Resistance,Junction to Ambient Thermal Resistanc.

2N3019 Datasheet (87.18 KB)

Preview of 2N3019 PDF
2N3019 Datasheet Preview Page 2

Datasheet Details

Part number:

2N3019

Manufacturer:

Inchange Semiconductor

File Size:

87.18 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

2N3010 NPN silicon low-power transistor (Motorola)

2N3011 SILICON NPN TRANSISTOR (Central Semiconductor)

2N3011 Bipolar NPN Device (Seme LAB)

2N3011 SWITCHING TRANSISTOR (Motorola)

2N3012 Bipolar PNP Device (Seme LAB)

2N3012 Small Signal Transistors (Central Semiconductor)

2N3012 SWITCHING TRANSISTOR (Motorola)

2N3012CSM Bipolar PNP Device (Seme LAB)

TAGS

2N3019 Silicon NPN Power Transistor Inchange Semiconductor

2N3019 Distributor