2N3010 Datasheet (Motorola) - NPN silicon low-power transistor

2N3010, NPN silicon low-power transistor

2N3010 (SILICON) CASE 22 (TO-18) NPN silicon low-power transistor primarily designed for high-speed, saturated switching applications.

Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Emitter Voltage VCES Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current - Continuous IC Total Device Dissipation @TA = 25°C Derate above 25° C Operating and Storage Junction Temperature Range PD TJ , Tstg Applica