2N3021 Datasheet (Motorola) - PNP silicon power transistors

2N3021, PNP silicon power transistors

2N3021 thru 2N3026 (SILICON) CASE1~ (TO 3) ~ PNP silicon power transistors for Class C power amplifiers, high-current core switching and high-speed switching and amplifier applications.

MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Symbol 2N3021 2N3024 VCB 30 VCEO 30 2N3022 2N3025 45 45 Emitter-Base Voltage VEB 4.0 Collector Current Base Current Ie 3.0 IB 0.5 Power Dissipation PD Junction Operating Temperature Range TJ 25 -65 to +175 2N3023 2