Datasheet4U Logo Datasheet4U.com

2N3055HV - NPN Power Transistor

📥 Download Datasheet

Preview of 2N3055HV PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number 2N3055HV
Manufacturer CDIL
File Size 222.32 KB
Description NPN Power Transistor
Datasheet download datasheet 2N3055HV_CDIL.pdf

2N3055HV Product details

Description

Collector Base Voltage ( Open Emitter) Collector Emitter Voltage (Open Base) Emitter Base Voltage Collector Current Base Current Total Power Dissipation up toTc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Rth(j-c) 1.75 ºC/W SYMBOL VCBO VCEO VEBO IC IB Ptot Tj Tstg VALUE 100 100 7.0 15 7.0 100 200 - 65 to +200 UNITS V V V A A W ºC ºC ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION Breakdown Voltages VCEO(sus) VCBO VEBO ICEX I

📁 2N3055HV Similar Datasheet

  • 2N3055H - 15A Power Transistors (Multicomp)
  • 2N3055 - COMPLEMENTARY SILICON POWER TRANSISTORS (STMicroelectronics)
  • 2N3055A - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola Inc)
  • 2N3055AG - Complementary Silicon High-Power Transistors (ON Semiconductor)
  • 2N3055B - NPN Transistor (INCHANGE)
  • 2N3055E - Bipolar NPN Device (Semelab Plc)
  • 2N3055ESMD - Bipolar NPN Device (Semelab Plc)
  • 2N3055G - Complementary Silicon Power Transistors (ON Semiconductor)
Other Datasheets by CDIL
Published: |