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2N3055B - NPN Transistor

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Datasheet Details

Part number 2N3055B
Manufacturer INCHANGE
File Size 223.48 KB
Description NPN Transistor
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2N3055B Product details

Description

Excellent Safe Operating Area DC Current Gain-hFE=70-140 @IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V

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