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2N3019 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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Datasheet Details

Part number 2N3019
Manufacturer CDIL
File Size 181.54 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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2N3019 Product details

Description

SYMBOL VALUE Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25º C Power Dissipation@ Tc=25ºC Junction Temperature Storage Temperature VCEO VCBO VEBO ICM PD Tj Tstg THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) 80 140 7 1 800 5 +200 -65 to +200 218.7 35 DESCRIPTION SYMBOL TEST CONDITION MIN MAX Collector Emitter Breakdown Voltage

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