IXYH8N250CV1HV Datasheet (IXYS)

IXYH8N250CV1HV, High Voltage IGBT

High Voltage XPTTM IGBT w/ Diode Advance Technical Information IXYH8N250CV1HV VCES = 2500V IC110 = 8A V CE(sat)  4.0V tfi(typ) = 86ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 15 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) f

IXYH8N250CV1HV Features

* High Voltage Package

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)