IXYH85N120C4 Datasheet - IXYS

IXYH85N120C4 High Speed Through IGBT

1200V XPTTM Gen 4 IGBT High Speed Through IGBT for 20-50kHz Switching IXYH85N120C4 VCES = 1200V I = 85A C110 V  2.50V CE(sat) tfi(typ) = 37ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM T stg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC= 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped .

IXYH85N120C4 Features

* Optimized for Low Switching Losses

* Positive Thermal Coefficient of Vce(sat)

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

* Motor Drives

* SMPS

* PFC Circuits

* Batter