IXYH85N120A4 Datasheet - IXYS

IXYH85N120A4 Ultra Low-Vsat PT IGBT

1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYH85N120A4 VCES = 1200V IC110 = 85A V  1.8V CE(sat) tfi(typ) = 280ns TO-247 (IXYH) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG =.

IXYH85N120A4 Features

* Optimized for Low Conduction Losses

* Positive Thermal Coefficient of Vce(sat)

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

* Motor Drives

* SMPS

* PFC Circuits

* Batte