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IXYH82N120C3 - 1200V XPT IGBT

Features

  • z z z z z z Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability International Standard Package Advantages High Power Density Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYH82N120C3 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 160 82 320 41 800 ICM = 164 @VCE ≤ VCES 1040 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 V V V V A A A A mJ A W °C °C °C °C °C Nm/lb.in.
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