IXYH40N65C3D1 Datasheet (IXYS)

IXYH40N65C3D1, IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYH40N65C3D1 IXYQ40N65C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load VGE= 15V, VCE = 360V,

IXYH40N65C3D1 Features

* Optimized for 20-60kHz Switching

* Square RBSOA

* Anti-Parallel Fast Diode

* Avalanche Rated

* Short Circuit Capability Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)