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IXYH40N120B3D1 - IGBT

IXYS

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Datasheet Details

Part number	IXYH40N120B3D1
Manufacturer	IXYS
File Size	181.47 KB
Description	IGBT
Datasheet	IXYH40N120B3D1-IXYS.pdf

IXYH40N120B3D1 Product details

Features

z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Anti-Parallel Ultra Fast Diode z Avalanche Rated z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 150°C Characteris.

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Published: Jul 21, 2016 |