IXYH40N120B3 Datasheet (IXYS)

IXYH40N120B3, IGBT

1200V XPTTM IGBT GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXYH40N120B3 VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 40A 2.9V 183ns TO-247 AD Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10Ω Clamped Inductive Load TC = 25°C Maximum Le

IXYH40N120B3 Features

* z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z W