IXXH40N65B4D1 Datasheet (IXYS) - Extreme Light Punch Through IGBT

IXXH40N65B4D1, Extreme Light Punch Through IGBT

XPTTM 650V IGBT GenX4TM w/Diode IXXH40N65B4D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol VCES V CGR VGES VGEM IC25 IC110 IF110 I CM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM T stg TL Md Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C T = 25°C, 1ms C VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temp

IXXH40N65B4D1 Features

* Optimized for 5-30kHz Switching

* Square RBSOA

* Anti-Parallel Diode

* Avalanche Rated

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Applications

* Power Inverters