IXXH40N65B4 Datasheet (IXYS)

IXXH40N65B4, 650V IGBTs

Preliminary Technical Information XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXH40N65B4 VCES = 650V IC110 = 40A VCE(sat)  2.0V tfi(typ) = 54ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE = 15V, VCE

IXXH40N65B4 Features

* Optimized for 5-30kHz Switching

* Square RBSOA

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250