IXXH110N65B4 Datasheet (IXYS)

IXXH110N65B4, 650V IGBT

XPTTM 650V IGBT GenX4TM IXXH110N65B4 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V I = 110A C110 V  2.10V CE(sat) tfi(typ) = 43ns Symbol VCES V CGR VGES VGEM I C25 ILRMS IC110 ICM SSOA (RBSOA) t sc (SCSOA) P C T J TJM T stg T L M d Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = 1M Continuous Transient T = 25°C (Chip Capability) C Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Induct

IXXH110N65B4 Features

* Optimized for 10-30kHz Switching

* Square RBSOA

* Short Circuit Capability

* High Current Handling Capability

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

* Motor Drives