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IXXH100N60B3 - IGBT

Features

  • z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XPTTM 600V IGBT GenX3TM IXXH100N60B3 Extreme Light Punch Through IGBT for 10-30 kHz Switching VCES = IC110 = V ≤ CE(sat) tfi(typ) = 600V 100A 1.80V 150ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.
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