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IXTT10N100D2 - Depletion Mode MOSFET

Download the IXTT10N100D2 datasheet PDF. This datasheet also covers the IXTH10N100D2 variant, as both devices belong to the same depletion mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Normally ON Mode.
  •  International Standard Packages.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH10N100D2-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTT100N25P N-Channel MOSFET IXYS Corporation
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IXTT110N10P N-Channel MOSFET IXYS Corporation
IXTT11P50 P-Channel MOSFET IXYS Corporation
IXTT140N10P Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTT10P60 Power MOSFET
IXTT110N10L2 Power MOSFET
IXTT120N15P Power MOSFET
IXTT12N140 Power MOSFET
IXTT12N150 High Voltage Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Depletion Mode MOSFET N-Channel Preliminary Technical Information IXTH10N100D2 IXTT10N100D2 VDSX = ID(on) >  RDS(on) D 1000V 10A 1.5 G S TO-247 (IXTH) G DS D (Tab) Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 1000 V 1000 V 20 V 30 V 695 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 6 g 4 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 1000 V VGS(off) VDS = 25V, ID = 1mA - 2.5 - 4.
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