IXTF1N450 Datasheet (IXYS) - High Voltage Power MOSFET

IXTF1N450, High Voltage Power MOSFET

High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N450 VDSS ID25 RDS(on) = 4500V = 0.9A  80 ISOPLUS i4-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 4500 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C 0.9 3.0 160 - 55 +150 150 - 55 +150 A A W C C C Maximum Lead Temperature

IXTF1N450 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4500V~ Electrical Isolation

* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages

* High Voltage Package

* Easy to Mount

* Space Savings

* High Power Density Applicati