IXTF02N450 Datasheet (IXYS) - High Voltage Power MOSFET

IXTF02N450, High Voltage Power MOSFET

Preliminary Technical Information High Voltage Power MOSFET IXTF02N450 VDSS I D25 RDS(on) = 4500V = 200mA  625 (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 V 4500 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 200 mA 600 mA TC = 25C 78 W - 55

IXTF02N450 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4500V~ Electrical Isolation

* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages

* High Voltage Package

* Easy to Mount

* Space Savings

* High Power Density Applicati