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IXTA02N250HV - High Voltage Power MOSFET

IXYS

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Datasheet Details

Part number	IXTA02N250HV
Manufacturer	IXYS
File Size	192.64 KB
Description	High Voltage Power MOSFET
Datasheet	IXTA02N250HV-IXYS.pdf

IXTA02N250HV Product details

Features

z High Voltage package z High Blocking Voltage z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8.
VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characteristic Values Min. Typ. Max. 2500 V 2.5 4.5 V ±100 nA 5 μA 500 μA 450 Ω.

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Published: Feb 11, 2025 |