IXTF1N400 Datasheet - IXYS

IXTF1N400 High Voltage Power MOSFET

High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N400 Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 Minute Maximum Ratings 4000 4000 V V ±20 V ±30 V 1A 3A 160 W - 55 +150 150 - 55 +150 °C °C °C .

IXTF1N400 Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Easy to Mount z Space Savings z High Power Density Applications z High Voltage Power Supplies z Capacitor Discharge

IXTF1N400 Datasheet (141.61 KB)