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IXGX75N250 - High Voltage IGBT

Download the IXGX75N250 datasheet PDF. This datasheet also covers the IXGK75N250 variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Very High Peak Current Capability Low Saturation Voltage MOS Gate Turn-On Rugged NPT Structure Molding Epoxies meet UL 94V-0 Flammability Classification Advantages Easy to Mount Space Savings High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGK75N250-IXYS.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = IC110 = VCE(sat) ≤ 2500V 75A 2.7V Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 2500 V 2500 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C (Lead RMS Limit) TC = 25°C, VGE = 20V, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 170 A 75 A 160 A 530 A ICM = 200 A @ 0.8 • VCES 780 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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