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IXFT30N50P - Power MOSFET

Download the IXFT30N50P datasheet PDF. This datasheet also covers the IXFH30N50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99414E(04/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd R thJC RthCs IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS Test Conditions Characteristic Values (T J = 25° C, unless otherwise specified) Min. Typ. Max. VDS= 20 V; ID = 0.5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH30N50P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFT120N15P Polar MOSFETs IXYS Corporation
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFT30N50 Power MOSFET
IXFT30N40Q Power MOSFET
IXFT30N60P Power MOSFET
IXFT30N60Q Power MOSFET
IXFT30N60X Power MOSFET

Full PDF Text Transcription

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS V= DSS ID25 = ≤ RDS(on) trr ≤ 500 V 30 A 200 mΩ 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGSS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.
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