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IXFT320N10T2 - Power MOSFET

Download the IXFT320N10T2 datasheet PDF. This datasheet also covers the IXFH320N10T2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH320N10T2_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

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Full PDF Text Transcription

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TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) ≤ 100V 320A 3.5mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.
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