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IXFT340N075T2 - Power MOSFET

Download the IXFT340N075T2 datasheet PDF. This datasheet also covers the IXFH340N075T2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 100A, Note 1 Characteristic Values Min. Typ. Max. 75 2.0 4.0 ±200 25 V V nA μA z z Easy to Mount Space Savings High Power Dens.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH340N075T2_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFT30N50Q3 Power MOSFET
IXFT320N10T2 Power MOSFET
IXFT120N15P Polar MOSFETs
IXFT12N100F Power MOSFET
IXFT12N50F HiPerRF Power MOSFETs F-Class: MegaHertz Switching

Full PDF Text Transcription

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Advance Technical Information TrenchT2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH340N075T2 IXFT340N075T2 VDSS ID25 RDS(on) = 75V = 340A ≤ 3.2mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 75 75 ± 20 340 160 850 170 960 935 -55 ... +175 175 -55 ... +175 V V V A A A A mJ W °C °C °C °C °C Nm/lb.in. g g G D S D (TAB) TO-268 (IXFT) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.
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