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IXFT30N50Q3 - Power MOSFET

Download the IXFT30N50Q3 datasheet PDF. This datasheet also covers the IXFH30N50Q3 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 300 260 1.13 / 10 4.0 6.0 Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH30N50Q3_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFT320N10T2 Power MOSFET
IXFT340N075T2 Power MOSFET
IXFT120N15P Polar MOSFETs
IXFT12N100F Power MOSFET
IXFT12N50F HiPerRF Power MOSFETs F-Class: MegaHertz Switching

Full PDF Text Transcription

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www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT30N50Q3 IXFH30N50Q3 VDSS ID25 RDS(on) = 500V = 30A ≤ 200mΩ TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g z z z z z Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 30 90 30 1.5 50 690 -55 ... +150 150 -55 ...
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