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IXFR36N60P Power MOSFET

IXFR36N60P Description

Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avala.

IXFR36N60P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect G = Gate S = So

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Datasheet Details

Part number
IXFR36N60P
Manufacturer
IXYS
File Size
104.77 KB
Datasheet
IXFR36N60P_IXYS.pdf
Description
Power MOSFET

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Power MOSFET IXYS
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