IXFR38N80Q2 Datasheet (IXYS Corporation)

IXFR38N80Q2, Power MOSFET

HiPerFETTM MOSFET Q2-Class (Electrically Isolated Back Surface) IXFR 38N80Q2 VDSS ID25 RDS(on) = = = 800 V 28 A 240 mΩ trr ≤ 250 ns Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force 5 g Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 2

IXFR38N80Q2 Features

* W °C °C °C °C V~ V~ z z ISOPLUS247 (IXFR) G D Isolated Back Surface D = Drain G = Gate S = Source z z z Double metal process for low gate resistance Silicon chip on DCB substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Epoxy meet UL 94 V-0, flammabil