Datasheet Details
- Part number
- IXFR30N110P
- Manufacturer
- IXYS Corporation
- File Size
- 129.52 KB
- Datasheet
- IXFR30N110P_IXYSCorporation.pdf
- Description
- Polar Power MOSFET HiPerFET
IXFR30N110P Description
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.IXFR30N110P Features
* Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5IXFR30N110P Applications
* z z z 50 μA 2.5 mA 400 mΩ z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION, A
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