IXFR120N25P Datasheet (IXYS) - PolarHT HiPerFET Power MOSFET

IXFR120N25P, PolarHT HiPerFET Power MOSFET

PolarHTTM HiPerFET IXFR 120N25P Power MOSFET Electrically Isolated Tab N-Channel Enhancement Mode Preliminary Data Sheet VDSS = 250 V ID25 = 61 A RDS(on) = 27 mΩ www.DataSheet4U.com Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ TJ = 25°C to 175°C TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs,

IXFR120N25P Features

* z International standard isolated package z UL recognized package z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, t = 1 minute Mounting force 300 260 2500 20..120 / 4.5..2