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IXFK80N50P - PolarHV HiPerFET Power MOSFET

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  • z z 1.13/10 Nm/lb. in. 10 6 g g z Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500 μA VDS = VGS, ID = 8 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 200 25 1 65 V V nA μA mA mΩ International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Spac.

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Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 80N50P IXFX 80N50P VDSS ID25 trr RDS(on) = 500 V = 80 A < 65 mΩ < 200 ns www.DataSheet4U.com TO-264 AA (IXFK) Symbol VDSS VDGR VGSM VGSM ID25 IL IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force Mounting torque (TO-264) TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ± 40 ± 30 80 75 200 80 80 305 10 1040 -55 ...
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