IXFK80N50Q3 - Power MOSFET

Datasheet Summary

Features

Low Intrinsic Gate Resistance.
Low Package Inductance.
Fast Intrinsic Rectifier.
Low RDS(on) and QG Advantages.
High Power Density.
Easy to Mount.
Space Savings.

IXYS

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Datasheet Details

Part number	IXFK80N50Q3
Manufacturer	IXYS
File Size	1.92 MB
Description	Power MOSFET
Datasheet	IXFK80N50Q3 Datasheet
Additional preview pages of the IXFK80N50Q3 datasheet.

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Full PDF Text Transcription

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK80N50Q3 IXFX80N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 80 240 80 5 50 1250 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.

Published: Dec 18, 2014 |