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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 72N20 80N20 72N20 80N20
VDSS IXFK72N20 IXFK80N20
ID25
RDS(on)
200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns
Maximum Ratings 200 200 ±20 ±30 72 80 288 320 74 45 5 360 -55 ... +150 150 -55 ... +150 300 0.9/6 10 V V V V A A A A A mJ V/ns W °C °C °C °C Nm/lb.in.
IXFK80N20 Datasheet
